Differential Gain and Linewidth-Enhancement Factor in Dilute-Nitride GaAs-Based 1.3-μm Diode Lasers
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چکیده
The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilutenitride GaAs-based near 1.3-μm lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7–2.5 for λ = 1.22–1.34μm dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices.
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تاریخ انتشار 2005